#2N3055 TRANSISTOR SPECIFICATIONS HOW TO#
#2N3055 TRANSISTOR SPECIFICATIONS LICENSE#
#2N3055 TRANSISTOR SPECIFICATIONS FREE#

This circuit can be built with different basic electronic components like 2N3055 transistor, variable resistor-5k, 3 вЂ“ LED strips which contains 4 LEDs in each strip, and a 12V battery. The simple voltage regulator circuit using a 2N3055 transistor is shown below.

#2N3055 TRANSISTOR SPECIFICATIONS HOW TO#

How to use 2N3055 Transistor/Circuit Diagram? The maximum flow of current allowed by the base is 7A DCД®quivalent 2N3055 transistors are 2N6675, 2N6673, complimentary pair of MJ2955 whereas similar 2N3055 transistors are BUX98, MJ10023 & BDW51.Highest voltage across B (base) & E (emitter) is 7V DC.Max voltage across base & collector is 100V DC.The current allowed by the collector (Max) is 15A DC.Operating temperature ranges from -65вњ¬ to +200вњ¬.Voltage across collector & emitter (Max) is 60V DC.The saturation voltage from collector to emitter is low.It includes an outstanding secure operating region.It has current handling and high power capacity.Includes three layers and three terminals.

#2N3055 TRANSISTOR SPECIFICATIONS FREE#

Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 48 or 80 TollВ FreeВ USA/Canada Fax: 48 or 80 Toll Free USA/Canada Email: Semiconductor Website: ДЇor additional information, please contact your local Sales Representative. Literature Distribution Center for ON Semiconductor P.O. Japan: ON Semiconductor, Japan Customer Focus CenterДў-9-1 Kamimeguro, Meguro-ku, Tokyo,В JapanВ 153-0051 Phone: 81-3-5773-3850 American TechnicalВ Support: 80 TollВ Free USA/Canada This literature is subject to all applicable copyright laws and is not for resale inВ any manner. SCILLC is an Equal Opportunity/AffirmativeВ ActionВ Employer. Should BuyerВ purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnifyВ and hold SCILLC and its officers, employees, subsidiaries,В affiliates, andВ distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personalВ injuryВ orВ death associated with such unintended or unauthorized use, even ifВ such claim alleges that SCILLC was negligent regarding the designВ or manufacture of the part. SCILLC products are not designed, intended, or authorized for use as components in systems intendedВ for surgical implant into the body, or other applications intendedВ to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

#2N3055 TRANSISTOR SPECIFICATIONS LICENSE#

SCILLC doesВ not convey any license under its patent rights norВ the rights of others. All operatingВ parameters, including вЂ Е“TypicalsвЂ Вќ must be validated for each customerВ application by customerвЂ™sВ technical experts.

вЂ Е“TypicalвЂ Вќ parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in differentВ applications and actual performance may vary over time. SCILLC makes no warranty,В representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arisingВ outВ ofВ the application or use of any product or circuit, and specifically disclaims any and all liability,В includingВ without limitation special, consequential or incidental damages. SCILLC reserves the right to make changes without further notice toВ any products herein. ON SemiconductorВ and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). Second breakdown pulse limits are valid for duty cycles to 10% but must be deratedДў.В CONTROLLING DIMENSION: INCH. LimitsВ of the transistor that must be observed for reliable operation В i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ThereВ are two limitations on the power handling ability ofДЄ transistor: average junction temperature and second breakdown.В Safe operating areaВ curvesВ indicateВ I *Small-Signal Current Gain CutoffВ FrequencyВ (V Second Breakdown Collector Current with Base Forward Biased PreferredВ devices are recommended choices for future use and best overall value. *ForВ additional information on our Pb-Free strategy and soldering details, pleaseДownload the ON Semiconductor Soldering and Mounting Techniques ReferenceВ Manual, SOLDERRM/D. If these limits are exceeded,В deviceВ functionalВ operation is not implied, damage may occur and reliabilityВ may be affected. Maximum ratings applied to the device are individual stress limit values (not normalВ operating conditions) and are not valid simultaneously. MaximumВ ratings are those values beyond which device damage can occur. Operating and Storage Junction Temperature Range General-purposeВ switching and amplifier applications. Semiconductor Components Industries, LLC, 2005Д¬omplementaryВ siliconВ powerВ transistorsВ areВ designedВ for

2n3055 transistor specifications